Redshift of the light emission from highly strained In 0.3Ga 0.7As/GaAs quantum wells by dipole δ doping

Journal of Applied Physics

Volumn 98, Issue 4, 2005, Pages

  Fu, Y ^a   Wang, S M ^a   Wang, X D ^a   Larsson, A ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT DIFFUSION EFFECT; ENERGY BAND STRUCTURES; GROUND-STATE ELECTRONS; SPIN-ORBITAL INTERACTIONS;

BAND STRUCTURE; ELECTRIC FIELD EFFECTS; INDIUM COMPOUNDS; LIGHT EMISSION; SEMICONDUCTING GALLIUM COMPOUNDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 25144510450     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2008351     Document Type: Article

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