Vertical and smooth, etching of InP by Cl2/Ch4/Ar inductively coupled plasma at room temperature

Chinese Physics Letters

Volumn 20, Issue 8, 2003, Pages 1312-1314

  Sun, Chang Zheng ^a   Zhou, Jin Bo ^a   Xiong, Bing ^a   Wang, Jian ^a   Luo, Yi ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CHLORINE COMPOUNDS; ETCHING; III-V SEMICONDUCTORS; INDUCTIVELY COUPLED PLASMA; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM PHOSPHIDE; SILICA; SURFACE ROUGHNESS;

ATOMIC-FORCE-MICROSCOPY; CH 4; ETCH RATES; ETCHED SURFACE; ETCHING PARAMETERS; FLOW RATIOS; INDUCTIVELY-COUPLED PLASMA; POWER; SMOOTH SURFACE; TABLE TEMPERATURE;

INDIUM PHOSPHIDE;

EID: 0043026702     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/20/8/338     Document Type: Article

References (12)

1. Sugawara M 1998 Plasma, etching: Fundamentals and Applications (New York: Oxford University Press) chap 8
2. Kurobe T, Mukaihara T, Yamanaka N, Iwai N and Kasukawa A 2000 Proc. 12th Int. Conf. on Indium Phosphide and Related Materials p 506
3. Matsutani A, Koyama F and Iga K 1998 Jpn. J. Appl Phys. 37 6655
4. Fujiwara Y et al 1997 Jpn. J. Appl. Phys. 36 7763
5. Hahn Y B et al 1999 Appl. Surf. Sci. 147 215
6. Diniz J A et al 1998 Solid-State Electron. 42 1947
7. Hahn Y B et al 2000 Plasma Chemistry and Plasma Processing 20 417
8. Maeda T et al 1999 Appl. Surf. Sci. 143 183
9. Lee J W et al 1998 Mat. Sci. Semicond. Proc. 1 65
10. Lee J W, Hong J and Pearton S J 1996 Appl. Phys. Lett. 68 847
11. Maeda T, Cho H, Hong J and Pearton S J 1999 J. Electron. Mater. 28 118
12. Matsutani A, Ohtsuki H, Koyama F and Iga K 1999 Jpn. J. Appl. Phys. 38 4260