Measurement of plasma density for control of etching profile in inductively coupled plasma etching of InP

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 5 A, 2002, Pages 3147-3148

  Matsutani, Akihiro ^a   Ohtsuki, Hideo ^a   Koyama, Fumio ^a   Iga, Kenichi ^a,b  

^a Tokyo Institute of Technology ^*  (Japan)

^b 33 Tanakamiya cho Takeda F   (Japan)

Author keywords

Cl2; Double probe; Dry etching; Inductively coupled plasma (ICP); InP; Mass spectrometry

Indexed keywords

INDUCTIVELY COUPLED PLASMA; MASS SPECTROMETRY; PLASMA DENSITY; PLASMA ETCHING; POSITIVE IONS;

ION DENSITY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0036578372     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.3147     Document Type: Article

References (7)