Mass effect of etching gases in vertical and smooth dry etching of InP

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 3 A, 2001, Pages 1528-1529

  Matsutani, Akihiro ^a   Ohtsuki, Hideo ^b   Muta, Seiichi ^b   Koyama, Fumio ^a   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b 33 Tanakamiya cho Takeda F   (Japan)

Author keywords

Cl2 SiCl4; Dry etching; Electron cyclotron resonance (ECR) plasma etching; Inductively coupled plasma (ICP); InP

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; ENERGY TRANSFER; INDIUM COMPOUNDS; INDUCTIVELY COUPLED PLASMA; MASKS; PLASMA ETCHING; SUBSTRATES;

ETCHING GASES; MIXED GASES;

DRY ETCHING;

EID: 0035269845     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1528     Document Type: Article

References (4)