Smooth and vertical-sidewall InP etching using Cl 2/N 2 inductively coupled plasma

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 2, 2004, Pages 510-512

  Lin, Jie ^a,b   Leven, Andreas ^b   Weimann, N G ^b   Yang, Y ^b   Kopf, R F ^b   Reyes, R ^b   Chen, Y K ^b   Choa, Fow Sen ^a  

^a UNIVERSITY OF MARYLAND BALTIMORE COUNTY   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAS FLOW RATES; ION ENERGY; SELF-BIAS VOLTAGE; SPUTTER-ENHANCED PROCESSES;

ATOMIC FORCE MICROSCOPY; DESORPTION; INDUCTIVELY COUPLED PLASMA; MORPHOLOGY; PRESSURE EFFECTS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SPUTTERING; SURFACE ROUGHNESS; TEMPERATURE CONTROL; THERMAL EFFECTS; VOLTAGE CONTROL;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 2342537111     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

1. S. J. Choi, K. Djordjev, S. J. Choi, and P. D. Dapkus, J. Vac. Sci. Technol. B 20, 301 (2002).
2. K. Asakawa et al., Jpn. J. Appl. Phys. 37, 373 (1998).
3. O. Wada and H. Hasegawa, InP-Based Materials and Devices: Physics and Technology (Wiley Interscience, New York, 1999).
4. S. Thomas and S. W. Pang, J. Vac. Sci. Technol. B 14, 4119 (1996).
5. D. Lishan, J. Lee, and G. Kim, GaAs Mantech, Las Vegas, 21-24 May 2001.
6. A. Matsutani, F. Koyama, and K. Iga, Jpn. J. Appl. Phys. 37, 6655 (1998).
7. J. Etrillard, P. Ossart, G. Patriarche, M. Juhel, J. F. Bresse, and C. Daguet, J. Vac. Sci. Technol. A 15, 626 (1997).
8. R. J. Shu, A. J. Howard, C. B. Vartuli, and P. A. Barnes, J. Vac. Sci. Technol. A 14, 1102 (1996).
9. Y. Feurprier, C. Cardinaud, and G. Turban, J. Vac. Sci. Technol. B 15, 1733 (1997).
10. C. S. Whelan, T. E. Lazior, and K. Y. Hur, J. Vac. Sci. Technol. B 15, 1728 (1997).
11. S. Miyaluni, R. Hattori, K. Sato, H. Takato, and O. Ishihara, J. Appl. Phys. 78, 5734 (1995).
12. S. C. McNevin, J. Vac, Sci. Technol. B 4, 1216 (1986).