InGaAsP-InP nanoscale waveguide-coupled microring lasers with submilliampere threshold current using Cl2-N2-based high-density plasma etching

IEEE Journal of Quantum Electronics

Volumn 41, Issue 3, 2005, Pages 351-356

  Park, Seoijin ^a,b   Kim, Seong Soo ^c,d   Wang, Liwei ^a,e   Ho, Seng Tiong ^a  

^a Northwestern University   (United States)

^b Covega Corporation ^*  (United States)

^c NORTHWESTERN UNIVERSITY   (United States)

^d LightBit Corporation   (United States)

^e BOEING COMPANY   (United States)

Author keywords

Etching; Quantum well (QW) lasers; Ring lasers; Semiconductor lasers; Waveguides

Indexed keywords

ANISOTROPY; ELECTRIC CURRENTS; INDUCTIVELY COUPLED PLASMA; LASER RESONATORS; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; PLASMA ETCHING; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS;

HIGH DENSITY PLASMA ETCHING; MICRORING LASERS; MICRORING RESONATOR; THRESHOLD CURRENT;

RING LASERS;

EID: 15544377755     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.842311     Document Type: Article

References (17)

1. R. J. Shul, G. B. McClellan, R. D. Briggs, D. J. Rieger, S. J. Pearton, C. R. Abernathy, J. W. Lee, C. Constantine, and C. Barratt, "High-density plasma etching of compound semiconductors," J. Vac. Sci. Technol. A, vol. 15, no. 3, pp. 633-637, May/Jun. 1997.
2. 4," J. Vac. Sci. Technol. A, vol. 15, no. 3, pp. 626-632, May/Jun. 1997.
3. P. D. Swanson, D. B. Shire, C. L. Tang, M. A. Parker, J. S. Kimmet, and R. J. Michalak, "Electron-cyclotron resonance etching of mirrors for ridge-guided lasers," IEEE Photon. Technol. Lett., vol. 7, no. 6, pp. 605-607, Jun. 1995.
4. H. Hatate, M. Hashimoto, H. Shirakawa, Y. Fujiwara, Y. Takeda, H. Nakano, T. Tatsuta, and O. Tsuji, "Fabrication of InP submicron pillars for two-dimensional photonic crystals by reactive ion etching," Jpn. J. Appl. Phys., vol. 37, pp. 7172-7176, Dec. 1998.
5. D. G. Rabus, M. Hamacher, U. Troppenz, and H. Heidrich, "Optical filters based on ring resonators with integrated semiconductor optical amplifiers in GaInAsP-InP," IEEE J. Select. Topics Quantum Electron. vol. 8, no. 6, pp. 1405-1411, Nov./Dec. 2002.
6. R. Grover, T. A. Ibrahim, T. N. Ding, Y. Leng, L. C. Kuo, S. Kanakaraju, K. Amarnath, L. C. Calhoun, and P. T. Ho, "Laterally coupled InP-based single-mode microracetrack notch filter," IEEE Photon. Technol. Lett., vol. 15, no. 8, pp. 1082-1084, Aug. 2003.
7. G. Franz, "Reactive ion etching of III/V semiconductors using carbon-containing gases," J. Electrochem. Soc., vol. 137, no. 9, pp. 2896-2903, Sep. 1990.
8. 2 mixtures: Mechanisms of etching and anisotropy," J. Vac. Sci. Technol. B, vol. 7, no. 5, pp. 1130-1139, Sep./Oct. 1989.
9. K. I. Ohtsuka, H. Sugimoto, T. Isu, and T. Matsui, "Role of carbon and hydrogen in reactive etching of InP by gas mixture of ethane and hydrogen," Jpn. J. Appl. Phys., vol. 32, pp. 4430-4435, Oct. 1993.
10. 2/Ar electron cyclotron resonance discharges," J. Vac. Sci. Technol. B, vol. 8, no. 4, pp. 596-606, Jul./Aug. 1990.
11. 2 ECR plasma," Jpn. J. Appl. Phys., vol. 31, pp. L655-L657, May 1992.
12. 2/Xe inductively coupled plasma," Jpn. J. Appl. Phys., vol. 38, pp. 4260-4261, Jul. 1999.
13. 2/Ar plasma etching of binary, ternary, and quaternary in-based compound semiconductors," J. Vac. Sci. Technol. B, vol. 14, no. 4, pp. 2567-2573, Jul./Aug. 1996.
14. 2 mixture," J. Appl. Phys., vol. 378, no. 9, pp. 5734-5738, Nov. 1995.
15. S. Park, S. S. Kim, L. Wang, and S. T. Ho, "Single-Mode lasing operation using a microring resonator as a wavelength selector," IEEE J. Quantum Electron., vol. 38, no. 3, pp. 270-273, Mar. 2002.
16. 0.8 As microcylinder laser diodes," Appl. Phys. Lett. vol. 62, pp. 2021-2023, 1993.
17. T. P. Lee, C. A. Burrus, J. A. Copeland, A. G. Dentai, and D. Marcuse, "Short-cavity InGaAsP injection lasers: Dependence of mode spectra and single-longitudinal-mode power on cavity length," IEEE J. Quantum Electron., vol. QE-18, no. 7, pp. 1101-1113, Jul. 1982.