Atomistic modeling of dopant implantation, diffusion, and activation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 5, 2006, Pages 2432-2436

  Pelaz, L ^a   Aboy, M ^a   Lopez, P ^a   Marques, L A ^a  

^a UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; ANNEALING; ATOMIC PHYSICS; COMPUTER SIMULATION; DIFFUSION; DOPING (ADDITIVES); MONTE CARLO METHODS; SUPERSATURATION;

ATOMISTIC KINETIC; ATOMISTIC MODELING; DOPANT IMPLANTATION; SUBAMORPHIZING IMPLANTS;

ION IMPLANTATION;

EID: 33749350786     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2348726     Document Type: Article

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