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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 120, Issue 1-4, 1996, Pages 5-8

Is there an effect of the proximity of a "free-surface" on the formation of End-Of-Range defects?

(8) Omri, M a Bonafos, C a Claverie, A a Nejim, A b Cristiano, F b Alquier, D c Martinez, A c Cowern, N E B d

a CEMES CNRS (France)

b UNIVERSITY OF SURREY (United Kingdom)

c LAAS CNRS (France)

d PHILIPS RESEARCH LABORATORIES (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; AMORPHOUS SILICON; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; ION IMPLANTATION; MICROSCOPIC EXAMINATION; SEMICONDUCTOR DOPING; SILICON WAFERS; SUPERSATURATION;

END-OF RANGE DEFECTS; TRANSIENT ENHANCED DIFFUSION;

SEMICONDUCTING SILICON;

EID: 0030566598 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(96)00471-5 Document Type: Article

Times cited : (26)

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