Approach to wetting-layer-assisted lateral coupling of InAs InP quantum dots

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 3, 2005, Pages

  Cornet, C ^a   Platz, C ^a   Caroff, P ^a   Even, J ^a   Labbe C ^a   Folliot, H ^a   Le Corre, A ^a   Loualiche, S ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33749158713     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.035342     Document Type: Article

References (34)

1. M. Grundmann, D. Bimberg and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, Chichester, 1998).
2. L. Banyai and S. W. Koch, Semiconductor Quantum Dots, World Scientific Series on Atomic, Molecular and Optical Physics (World Scientific, Singapore, 1993), Vol. 2.
3. M. Sugawara, Self-Assembled InGaAs/GaAs Quantum Dots, Semiconductors and Semimetals (Academic, Toronto, 1999), Vol. 60.
4. Zh. I. Alferov, Quantum Wires and Dots Show the Way Forward (III-Vs Rev., City, 1998), Vol. 11, p. 47.
5. G. T. Liu, A. Stintz, H. Li, T. C. Newell, A. L. Gray, P. M. Varangis, K. J. Malloy, and L. F. Lester, IEEE J. Quantum Electron. IEJQA7 0018-9197 10.1109/3.890268 36, 1272 (2000).
6. H. Saito, K. Nishi, A. Kamei, and S. Sugou, IEEE Photonics Technol. Lett. IPTLEL 1041-1135 10.1109/68.883809 12, 1298 (2000).
7. O. B. Shcheckin and D. G. Deppe, IEEE Photonics Technol. Lett. IPTLEL 1041-1135 10.1109/LPT.2002.801597 14, 1231 (2002).
8. S. Frechengues, N. Bertru, V. Drouot, B. Lambert, S. Robinet, S. Loualiche, D. Lacombe and A. Ponchet, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.123343 74, 3356 (1999).
9. C. Paranthoën, N. Bertru, B. Lambert, O. Dehaese, A. Le Corre, J. Even, S. Loualiche, F. Lissillour, G. Moreau and J. C. Simon, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/17/2/102 17, L5 (2002).
10. C. Paranthoën, C. Platz, G. Moreau, N. Bertru, O. Dehaese, A. Le Corre, P. Miska, J. Even, H. Folliot, C. Labbé, G. Patriarche, J. C. Simon, and S. Loualiche, J. Cryst. Growth JCRGAE 0022-0248 10.1016/S0022- 0248(02)02473-9 251, 230 (2003).
11. C. Cornet, C. Labbé, H. Folliot, N. Bertru, O. Dehaese, J. Even, A. Le Corre, C. Paranthoen, C. Platz, and S. Loualiche, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1832750 85, 5685 (2004).
12. P. Miska, C. Paranthoen, J. Even, O. Dehaese, H. Folliot, N. Bertru, S. Loualiche, M. Senes, and X. Marie, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/17/10/103 17, L63 (2002).
13. P. Miska, J. Even, C. Paranthoen, O. Dehaese, H. Folliot, S. Loualiche, M. Senes, and X. Marie, Physica E (Amsterdam) PELNFM 1386-9477 10.1016/S1386-9477(02)00749-X 17, 56 (2003).
14. P. Miska, C. Paranthoen, J. Even, N. Bertru, A. Le Corre, and O. Dehaese, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/14/47/306 14, 12301 (2002).
15. C. Kammerer, G. Cassabois, C. Voisin, C. Delalande, Ph. Roussignol, and J. M. Gérard, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.87. 207401 87, 207401 (2001)
16. C. Kammerer, G. Cassabois, C. Voisin, C. Delalande, Ph. Roussignol, A. Lemaître, and J. M. Gérard, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.033313 65, 033313 (2002)
17. C. Kammerer, C. Voisin, G. Cassabois, C. Delalande, Ph. Roussignol, F. Klopf, J. P. Reithmaier, A. Forchel, and J. M. Gérard, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.66.041306 66, 041306 (R) (2002)
18. C. Kammerer, G. Cassabois, C. Voisin, M. Perrin, C. Delalande, Ph. Roussignol, and J. M. Gérard, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1510158 81, 2737 (2002).
19. R. V. N. Melnik and M. Willatzen, in Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems, Nano Science and Technology Institute, 2002, pp. 506-509.
20. H. T. Johnson, R. Bose, H. D. Robinson, and B. B. Goldberg, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1575509 82, 3382 (2003).
21. H. T. Johnson, V. Nguyen, and A. F. Bower, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1505687 92, 4653 (2002).
22. H. D. Robinson and B. B. Goldberg, Physica E (Amsterdam) PELNFM 1386-9477 10.1016/S1386-9477(99)00211-8 6, 444 (2000).
23. H. D. Robinson, B. B. Goldberg and J. L. Merz, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.64.075308 64, 075308 (2001).
24. H. D. Robinson, B. B. Goldberg, and J. L. Merz, in Proceedings of the Materials Research Society, 1999, Vol. 571, p. 189.
25. G. W. Bryant, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.40.1620 40, 1620 (1989).
26. N. V. Tkach, A. M. Makhanets, and G. G. Zegrya, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/15/4/315 15, 395 (2000).
27. S. Lee, O. L. Lazarenkova, P. von Allmen, F. Oyafuso, and G. Klimeck, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.70.125307 70, 125307 (2004).
28. P. Miska, J. Even, C. Platz, B. Salem, T. Benyattou, C. Bru-Chevalier, G. Guillot, G. Bremond, Kh. Moumanis, F. H. Julien, O. Marty, C. Monat, and M. Gendry, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1638890 95, 1074 (2004).
29. S. Le Goff and B. Stébé, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.47.1383 47, 1383 (1993).
30. J. W. Jang, S. H. Pyun, S. H. Lee, I. C. Lee, W. G. Jeong, R. Stevenson, P. D. Dapkus, N. J. Kim, M. S. Hwang, and D. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1812365 85, 3675 (2004).
31. C. Metzner, M. Hofmann, and G. H. Döhler, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.58.7188 58, 7188 (1998).
32. Y. Ducommun, M. Kroutvar, M. Reimer, M. Bichier, D. Schuh, G. Abstreiter, and J. J. Finley, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1784040 85, 2592 (2004).
33. P. Caroff, N. Bertru, C. Platz, O. Dehaese, A. Le Corre, and S. Loualiche, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro.2004.09.031 273, 357 (2005).
34. P. Caroff, N. Bertru, A. Le Corre, O. Dehaese, T. Rohel, H. Folliot, and S. Loualiche (unpublished).