Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP(001)

Journal of Applied Physics

Volumn 95, Issue 3, 2004, Pages 1074-1080

  Miska, P ^a   Even, J ^a   Platz, C ^a   Salem, B ^b   Benyattou, T ^b   Bru Chevalier, C ^b   Guillot, G ^b   Bremond, G ^b   Moumanis, Kh ^c   Julien, F H ^c   Marty, O ^d   Monat, C ^e   Gendry, M ^e  

^a INSA DE RENNES   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^c UNIVERSITÉ PARIS SACLAY   (France)

^d UNIVERSITÉ LYON 1   (France)

^e ECOLE CENTRALE DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; ELECTRONIC STRUCTURE; GROUND STATE; INFRARED SPECTROSCOPY; LOW TEMPERATURE OPERATIONS; MATHEMATICAL MODELS; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

CARRIER CONFINEMENT; CONDUCTION-BAND INTERSUBBAND TRANSITIONS; INDIUM ARSENIDE QUANTUM DASHES; OPTICAL TRANSITIONS;

CHARGE CARRIERS;

EID: 10744233813     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1638890     Document Type: Article

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