Redistribution dynamics of optically generated charges in In(Ga)As/GaAs self-assembled quantum dots

Applied Physics Letters

Volumn 85, Issue 13, 2004, Pages 2592-2594

  Ducommun, Y ^a   Kroutvar, M ^a   Reimer, M ^a   Bichler, M ^a   Schuh, D ^a   Abstreiter, G ^a   Finley, J J ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ACTIVATION ENERGY; BANDWIDTH; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; GROUND STATE; IONIZATION; PHOTODIODES; PHOTOLUMINESCENCE; SCHOTTKY BARRIER DIODES; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

CHARGE DISTRIBUTIONS; EXCITATION ENERGY; LATTICE TEMPERATURES; QUANTUM INFORMATION PROCESSING (QIP);

SEMICONDUCTOR QUANTUM DOTS;

EID: 7644226805     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1784040     Document Type: Article

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