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Journal of Applied Physics

Volumn 92, Issue 8, 2002, Pages 4653-4663

Simulated self-assembly and optoelectronic properties of InAs/GaAs quantum dot arrays

(3) Johnson, H T a Nguyen, V a Bower, A F b

a United States of America (United States)

b Brown University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL MODEL; CONFINEMENT PROPERTIES; EFFECTS OF STRAINS; HOLE STATE; INAS/GAAS; INHOMOGENEOUS BROADENING; OPTOELECTRONIC PROPERTIES; P-TYPE; QUANTUM DOT ARRAYS; SIZE AND SHAPE; SPECTRAL PROPERTIES; SPONTANEOUS FORMATION; STRAINED EPITAXIAL FILMS; WETTING LAYER; ZERO-DIMENSIONAL;

ELECTRON GAS; EPITAXIAL FILMS; EPITAXIAL GROWTH; FINITE ELEMENT METHOD; OPTICAL MATERIALS; QUANTUM CONFINEMENT; SELF ASSEMBLY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 18744365154 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1505687 Document Type: Article

Times cited : (25)

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