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Volumn 14, Issue 47, 2002, Pages 12301-12309

Experimental and theoretical studies of electronic energy levels in InAs quantum dots grown on (001) and (113)B InP substrates

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CURRENT DENSITY; ELECTRON ENERGY LEVELS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

EID: 0037011343     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/47/306     Document Type: Article
Times cited : (26)

References (34)
  • 1
    • 0000202565 scopus 로고    scopus 로고
    • Self-assembled InGaAs/GaAs quantum dots
    • San Diego, CA: Academic
    • Sugawara M. (ed) 1999 Self-Assembled InGaAs/GaAs Quantum Dots (Semiconductors and Semimetals vol 60) (San Diego, CA: Academic).
    • (1999) Semiconductors and Semimetals , vol.60
    • Sugawara, M.1
  • 5
    • 0033725387 scopus 로고    scopus 로고
    • Physics and simulation of optoelectronic devices VIII
    • ed R. Binder, P. Blood and M. Osinski (Bellingham, WA: SPIE Optical Engineering Press)
    • Bimberg D. and Ledentsov N.N. 2000 Physics and Simulation of Optoelectronic Devices VIII (Proc. SPIE vol 3944) ed R. Binder, P. Blood and M. Osinski (Bellingham, WA: SPIE Optical Engineering Press) p 790.
    • (2000) Proc. SPIE , vol.3944 , pp. 790
    • Bimberg, D.1    Ledentsov, N.N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.