Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 12, 2004, Pages

  Lee, Seungwon ^a   Lazarenkova, Olga L ^a   Von Allmen, Paul ^a   Oyafuso, Fabiano ^a   Klimeck, Gerhard ^a,b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM ARSENIDE; INDIUM ARSENIDE; UNCLASSIFIED DRUG;

ARTICLE; ELECTRON TRANSPORT; MATHEMATICAL MODEL; MOLECULAR DYNAMICS; QUANTUM MECHANICS; SEMICONDUCTOR;

EID: 19744381329     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.125307     Document Type: Article

References (34)

1. D. Bimberg, M. Grundmann, and N. Ledentsov, in, Quantum Dot Heterostructures (Wiley, New York, 1998).
2. M. Califano and P. Harrison, Phys. Rev. B 61, 10 959 (2000).
3. A. J. Williamson, L.-W. Wang, and A. Zunger, Phys. Rev. B 62, 12 963 (2000).
4. A. J. Williamson and A. Zunger, Phys. Rev. B 59, 15 819 (1999).
5. C. Pryor, Phys. Rev. B 57, 7190 (1998).
6. C. Pryor, Phys. Rev. B 60, 2869 (1999).
7. W. Sheng and J.-P. Leburton, Phys. Rev. B 63, 161301 (2001).
8. W. Sheng and J.-P. Leburton, Phys. Rev. B 64, 153302 (2001).
9. W. Sheng and J.-P. Leburton, Phys. Rev. B 67, 125308 (2003).
10. C. E. Pryor and M. E. Flatte, Phys. Rev. Lett. 91, 257901 (2003).
11. M. Grundmann, O. Stier, and D. Bimberg, Phys. Rev. B 52, 11 969 (1995).
12. L.-W. Wang, J. Kim, and A. Zunger, Phys. Rev. B 59, 5678 (1999).
13. J. Groenen, C. Priester, and R. Carles, Phys. Rev. B 60, 16013 (1999).
14. L. R. C. Fonseca, J. L. Jimenez, J. P. Leburton, and R. M. Martin, Phys. Rev. B 57, 4017 (1998).
15. O. Stier, M. Gruendmann, and D. Bimberg, Phys. Rev. B 59, 5688 (1999).
16. J. Shumway, A. Williamson, A. Zunger, A. Passaseo, M. DeGiorgi, R. Cingolani, M. Catalano, and P. Crozier, Phys. Rev. B 64, 125302 (2001).
17. R. Santoprete, B. Koiller, R. B. Capaz, P. Kratzer, Q. K. K. Liu, and M. Scheffler, Phys. Rev. B 68, 235311 (2003).
18. P. Keating, Phys. Rev. 145,. 637 (1966).
19. R. M. Martin, Phys. Rev. B 1, 4005 (1970).
20. C. Pryor, J. Kim, L. W. Wang, A. J. Williamson, and A. Zunger, J. Appl. Phys. 83, 2548 (1998).
21. O. Madelung, in Semiconductors-Basic Data 2nd ed. (Springer-Verlag, New York, 1996).
22. T. B. Boykin, G. Klimeck, R. C. Bowen, and F. Oyafuso, Phys. Rev. B 66, 125207 (2002).
23. G. Klimeck, F. Oyafuso, T. B. Boyking, R. C. Bowen, and P. von Allmen, Comput. Modeling Eng. Sci. 3, 601 (2002).
24. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, Appl. Phys. Rev. 89, 5815 (2001).
25. J. M. Moison, F. Houzay, F. Barthe, L. Leprince, E. André, and O. Vatel, Appl. Phys. Lett. 64, 196 (1994).
26. N. P. Kobayashi, T. R. Ramachandran, P. Chen, and A. Madhukar, Appl. Phys. Lett. 68, 3299 (1996).
27. I. Mukahametzhanov, J. Wei, R. Heitz, and A. Madhukar, Appl. Phys. Lett. 75, 85 (1999).
28. G. S. Solomon, J. A. Trezza, A. F. Marshall, and J. J. S. Harris, Phys. Rev. Lett. 76, 952 (1996).
29. L. Artus, R. Cusco, S. Hernandez, A. Patane, A. Polimeni, M. Henini, and L. Eaves, Appl. Phys. Lett. 77, 3556 (2000).
30. F. Oyafuso, G. Klimeck, P. von Allmen, and T. B. Boykin, Phys. Status Solidi B 239, 71 (2003).
31. 44 from the experimental value. However, the shear strain is localized near the interface and the biaxial strain is overall dominant in the self-assembled dot.
32. S. Lee, P. von Allmen, F. Oyafuso, and G. Klimeck, Phys. Rev. B 69, 045316 (2004).
33. P. W. Fry, I. E. Itskevich, D. J. Mowbray, M. S. Skolnick, J. J. Finley, J. A. Barker, E. P. O'Reilly, L. R. Wilson, I. A. Larkin, P. A. Maksym, M. Hopkinson, M. Al-Khafaji, J. P. R. David, A. G. Cullis, G. Hill, and J. C. Clark, Phys, Rev. Lett. 84, 733 (2000).
34. S. Raymond, S. Studenikin, A. Sachrajda, Z. Wasilewski, S. J. Cheng, W. Sheng, P. Hawrylak, A. Babinski, M. Potemski, G. Ortner, and M. Bayer, Phys. Rev. Lett. 92, 187402 (2004).