Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique

Semiconductor Science and Technology

Volumn 21, Issue 8, 2006, Pages 1172-1175

  Lin, Yow Jon ^a   Chu, Yow Lin ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CONCENTRATION (PROCESS); CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); MATHEMATICAL MODELS; OHMIC CONTACTS;

CAPPING LAYERS; CONTACT RESISTIVITY; HOLE GAS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33749056388     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/8/032     Document Type: Article

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