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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 10, 2005, Pages 7254-7259

Effect of carrier blocking layers on the emission characteristics of AlGaN-based ultraviolet light emitting diodes

(6) Park, Ji Soo a Fothergill, Daryl W a Zhang, Xiyao a Reitmeier, Zachary J a Muth, John F a Davis, Robert F a

a North Carolina State University (United States)

Author keywords

AlGaN; Carrier blocking layer; Light emitting diode; Quantum well; Ultraviolet

Indexed keywords

ABSORPTION; ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET RADIATION;

ALGAN; CARRIER BLOCKING LAYER;

LIGHT EMITTING DIODES;

EID: 31544431767 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.7254 Document Type: Article

Times cited : (15)

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