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Volumn 97, Issue 10, 2005, Pages

Effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p -type GaN

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION-BAND; DEFECT FORMATION ENERGY; ENERGETIC IONS; SURFACE BAND BENDING;

EID: 20944432454     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1894580     Document Type: Article
Times cited : (42)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.