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Volumn 97, Issue 10, 2005, Pages
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Effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p -type GaN
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Author keywords
[No Author keywords available]
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Indexed keywords
CONDUCTION-BAND;
DEFECT FORMATION ENERGY;
ENERGETIC IONS;
SURFACE BAND BENDING;
CRYSTAL DEFECTS;
DOPING (ADDITIVES);
DRY ETCHING;
MAGNESIUM PRINTING PLATES;
REACTIVE ION ETCHING;
SAPPHIRE;
SECONDARY ION MASS SPECTROMETRY;
SURFACE REACTIONS;
GALLIUM NITRIDE;
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EID: 20944432454
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1894580 Document Type: Article |
Times cited : (42)
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References (21)
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