Novel type of ohmic contacts to p-doped GaN using polarization fields in thin InxGa1-xN capping layers

Journal of Electronic Materials

Volumn 31, Issue 5, 2002, Pages 416-420

  Gessmann, T ^a   Li, Y L ^a   Waldron, E L ^a   Graff, J W ^a   Schubert, E F ^a   Sheu, J K ^b  

^a Boston University   (United States)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

GaN; InGaN; Ohmic contact; p doping; Polarization; Specific contact resistance

Indexed keywords

LIGHT EMITTING DIODES; OHMIC CONTACTS; PHOTOLITHOGRAPHY; POLARIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

SPECIFIC CONTACT RESISTANCE;

GALLIUM NITRIDE;

EID: 0036576014     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0094-7     Document Type: Article

References (13)