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Volumn 41, Issue 2 A, 2002, Pages 581-582

Effect of thermal annealing on the Pd/Au contact to P-type Al0.15Ga0.85N

Author keywords

Ga vacancy; N preservation; Ohmic contact; p type Al0.15Ga0.85N; Pd Au thermal annealing

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; GOLD; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PALLADIUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS;

EID: 0036478373     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.581     Document Type: Article
Times cited : (18)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.