|
Volumn 41, Issue 2 A, 2002, Pages 581-582
|
Effect of thermal annealing on the Pd/Au contact to P-type Al0.15Ga0.85N
a a a |
Author keywords
Ga vacancy; N preservation; Ohmic contact; p type Al0.15Ga0.85N; Pd Au thermal annealing
|
Indexed keywords
ANNEALING;
AUGER ELECTRON SPECTROSCOPY;
CURRENT VOLTAGE CHARACTERISTICS;
GOLD;
INTERFACES (MATERIALS);
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
PALLADIUM;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTOR DIODES;
SEMICONDUCTOR QUANTUM WELLS;
ULTRAVIOLET LASER DIODES;
OHMIC CONTACTS;
|
EID: 0036478373
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.41.581 Document Type: Article |
Times cited : (18)
|
References (12)
|