Ohmic contact technology in III nitrides using polarization effects of cap layers

Journal of Applied Physics

Volumn 92, Issue 7, 2002, Pages 3740-3744

  Gessmann, Th ^a   Graff, J W ^a   Li, Y L ^a   Waldron, E L ^a   Schubert, E F ^a  

^a Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAP LAYERS; CONTACT TECHNOLOGIES; DESIGN RULES; GAN CAP LAYERS; III-NITRIDE; LATTICE-MISMATCHED; LOW RESISTANCE; METAL CONTACTS; P-TYPE; POLARIZATION EFFECT; POLARIZATION-ENHANCED; TUNNEL BARRIER;

BUFFER LAYERS; ELECTRIC CONTACTORS; ELECTRIC FIELDS; GALLIUM NITRIDE; POLARIZATION;

OHMIC CONTACTS;

EID: 18644373819     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1504169     Document Type: Article

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