Highly electrical resistive SiTiNx heating layers and diffusion barriers for PCRAM

Semiconductor Science and Technology

Volumn 21, Issue 8, 2006, Pages 1196-1201

  Cheng, Huai Yu ^a   Chen, Yi Chen ^b   Chung, Ren Jei ^a   Chin, Tsung Shune ^a,c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL APPLIED RESEARCH LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; SEMICONDUCTING SILICON COMPOUNDS; THERMODYNAMIC STABILITY;

AMORPHOUS STRUCTURE; DIFFUSION BARRIERS; HEATING LAYERS; PHASE CHANGE RANDOM ACCESS MEMORY (PCRAM);

RANDOM ACCESS STORAGE;

EID: 33749054046     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/8/036     Document Type: Article

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