Deposition characteristics of Ti-Si-N films reactively sputtered from various targets in a N2/Ar gas mixture

Journal of Electronic Materials

Volumn 30, Issue 2, 2001, Pages 84-88

  Lee, W H ^a   Park, S K ^a   Kang, B J ^a   Reucroft, P J ^b   Lee, J G ^a  

^a Kookmin University   (South Korea)

^b UNIVERSITY OF KENTUCKY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHEMICAL BONDS; CRYSTALLINE MATERIALS; DIFFUSION IN SOLIDS; FILM GROWTH; METALLIZING; NITROGEN; SILICON NITRIDE; SPUTTER DEPOSITION; STOICHIOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

TITANIUM SILICON NITRIDE;

TITANIUM NITRIDE;

EID: 0035251577     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0104-1     Document Type: Article

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