Barrier property of TiSiN films formed by low frequency, high density inductively coupled plasma process

Surface and Coatings Technology

Volumn 198, Issue 1-3 SPEC. ISS., 2005, Pages 291-295

  Ee, Y C ^a   Chen, Z ^a   Wang, W D ^b   Chi, D Z ^b   Xu, S ^c   Law, S B ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d Chartered Semiconductor Manufacturing   (Singapore)

Author keywords

Cu metallization; Diffusion; Plasma implantation; TiSiN barrier

Indexed keywords

COPPER; DIFFUSION; INDUCTIVELY COUPLED PLASMA; MASS SPECTROMETERS; SILICON COMPOUNDS; TITANIUM COMPOUNDS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

BARRIER FILM STRUCTURES; COMPOSITIONAL ANALYSIS; TERNARY FILMS; TISIN FILMS;

METALLIC FILMS;

COATING;

EID: 20744457588     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2004.10.105     Document Type: Article

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