Characteristics and interactions of threading dislocations in GaN films grown on (0001) sapphire substrates with or without short-period superlattice insertion

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 9 A, 2006, Pages 6888-6892

  Wang, Wei Lin ^a   Gong, Jyh Rong ^b   Wang, Cheng Liang ^a   Liao, Wei Tsai ^a   He, Ju Liang ^a   Chi, Yuan Chen ^a   Shi, Jen Bin ^a  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Defect analyses; GaN; Threading dislocations

Indexed keywords

CRYSTAL DEFECTS; GALLIUM NITRIDE; SAPPHIRE; SUPERLATTICES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT ANALYSES; SAPPHIRE SUBSTRATES; SHORT PERIOD SUPERLATTICES (SPSL); THREADING DISLOCATIONS (TD);

DISLOCATIONS (CRYSTALS);

EID: 33749011943     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.6888     Document Type: Article

References (18)

1. S. D. Lester, F. A. Ponce, M. G. Garford and D. A. Steigerwald: Appl. Phys. Lett. 66 (1995) 1249.
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matsushita and T. Mukai: Appl. Phys. Lett. 76 (2000) 22.
3. V. Narayanan, K. Lorenz, W. Kim and S. Mahajian: Appl. Phys. Lett. 78 (2001) 1544.
4. F. A. Ponce, D. Chems, W. T. Young and J. W. Steeds: Appl. Phys. Lett. 69 (1996) 770.
5. X. H. Wu, L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. P. DenBaars and J. S. Speck: J. Appl. Phys. 80 (1996) 3228.
6. L. Sugiura: J. Appl. Phys. 81 (1997) 1633.
7. S. K. Mathis, A. E. Romanov, L. F. Chen, G. E. Beltz, W. Pompe and J. S. Speck: J. Cryst. Growth 231 (2001) 371.
8. T. Mukai, K. Takekawa and S. Nakamura: Jpn. J. Appl. Phys. 37 (1998) L839.
9. T. W. Weeks, Jr., M. D. Bremser, K. S. Ailey, E. Carlson, W. G. Perry and R. F. Davis: Appl. Phys. Lett. 67 (1995) 401.
10. O. H. Nam, M. D. Bremser, T. S. Zheleva and R. F. Davis: Appl. Phys. Lett. 71 (1997) 2638.
11. B. H. Shih, J. R. Gong, S. W. Lin, Y. L. Tsai, W. T. Liao, T. Y. Lin, Y. T. Lee and J. G. Chang: J. Cryst. Growth 276 (2005) 362.
12. A. Thamm, O. Brandt, Y. Takemura, A. Trampert and K. H. Ploog: Appl. Phys. Lett. 75 (1999) 944.
13. Y. L. Tsai and J. R. Gong: Opt. Mater. 27 (2004) 425.
14. J. R. Gong, S. F. Tseng, C. W. Huang, Y. L. Tsai, W. T. Liao, C. L. Wang, B. H. Shi and T. Y. Lin: Jpn. J. Appl. Phys. 42 (2003) 6823.
15. A. D. Bykhovski, B. L. Gelmont and M. S. Shur: J. Appl. Phys. 81 (1997) 6332.
16. Ph. Komninou, J. Kioseoglou, G. P. Dimitrakopulos, Th. Kehagias and Th. Karakostas: Phys. Status Solidi A 202 (2005) 2888.
17. J. P. Hirth and J. Lothe: Theory of Dislocations (John Wiley & Sons, New York, 1982) 2nd ed., p. 91.
18. J.-M. Bethoux and P. Vennéguès: J. Appl. Phys. 97 (2005) 123504.