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Volumn 276, Issue 3-4, 2005, Pages 362-366
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On the optical properties and microstructures of GaN films inserted with low-temperature Al0.8Ga0.2N interlayers
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Author keywords
A1. Characterization; B1. Nitrides; B2. Semiconducting gallium compounds
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Indexed keywords
CRYSTAL MICROSTRUCTURE;
DISLOCATIONS (CRYSTALS);
GALLIUM NITRIDE;
MORPHOLOGY;
PHOTOLUMINESCENCE;
TRANSMISSION ELECTRON MICROSCOPY;
CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (XTEM);
EPITAXIAL LATERAL OVERGROWTH (ELOG);
NEAR BAND EDGE EMISSIONS;
ROOM TEMPERATURE (RT);
SEMICONDUCTING FILMS;
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EID: 15344339898
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.11.404 Document Type: Article |
Times cited : (2)
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References (14)
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