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Volumn 276, Issue 3-4, 2005, Pages 362-366

On the optical properties and microstructures of GaN films inserted with low-temperature Al0.8Ga0.2N interlayers

Author keywords

A1. Characterization; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; MORPHOLOGY; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 15344339898     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.404     Document Type: Article
Times cited : (2)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.