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Volumn 27, Issue 3, 2004, Pages 425-428

Influence of low-temperature AlGaN intermediate multilayer structures on the growth mode and properties of GaN

Author keywords

GaN; LT AlGaN intermediate multilayers; Threading dislocations

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL REACTORS; DISLOCATIONS (CRYSTALS); LOW TEMPERATURE EFFECTS; OPTICAL MULTILAYERS; PHOTOLUMINESCENCE; QUARTZ; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

EID: 9544243715     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2004.03.021     Document Type: Article
Times cited : (8)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.