Investigation of RuO2/4H-SiC Schottky diode contacts by deep level transient spectroscopy

Chemical Physics Letters

Volumn 429, Issue 4-6, 2006, Pages 617-621

  Buc, D ^a   Stuchlikova, L ^a   Helmersson, U ^b   Chang, W H ^c   Bello, I ^c,d  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^b LINKÖPING UNIVERSITY   (Sweden)

^c UNIVERSITY OF WESTERN ONTARIO   (Canada)

^d CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONIC PROPERTIES; RUTHENIUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES;

CAPACITANCE-VOLTAGE (C-V) METHODS; CONDUCTION BAND; RUTHENIUM IMPURITIES;

SCHOTTKY BARRIER DIODES;

EID: 33748856989     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2006.08.084     Document Type: Article

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