Investigation of reactive ion etching of dielectrics and Si in CHF 3/O2 or CHF3/Ar for photovoltaic applications

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 5, 2006, Pages 1857-1865

  Gatzert, C ^a,c   Blakers, A W ^a   Deenapanray, Prakash N K ^a   Macdonald, D ^a   Auret, F D ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF PRETORIA   (South Africa)

^c UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIELECTRIC MATERIALS; PASSIVATION; PLASMAS; REACTIVE ION ETCHING; SILICON;

FLOW RATE; MINORITY CARRIER; PHOTOVOLTAIC APPLICATIONS; RADIO FREQUENCY POWER (RF-POWER);

PHOTOVOLTAIC CELLS;

EID: 33748539089     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2333571     Document Type: Article

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