Review and comparison of equations relating bulk lifetime and surface recombination velocity to effective lifetime measured under flash lamp illumination

Solar Energy Materials and Solar Cells

Volumn 77, Issue 3, 2003, Pages 293-301

  Brody, Jed ^a   Rohatgi, Ajeet ^a   Ristow, Alan ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Lifetime; Photoconductance; Recombination

Indexed keywords

ERROR ANALYSIS; LIGHT VELOCITY; LIGHTING; SOLAR CELLS; TRANSIENTS;

BULK LIFETIME; SURFACE RECOMBINATION VELOCITY;

PHOTOCONDUCTIVITY;

EID: 0037473604     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(02)00350-1     Document Type: Article

References (15)

1. Boulou M., Bois D. Cathodoluminescence measurements of the minority-carrier lifetime in semiconductors. J. Appl. Phys. 48:1977;4713-4721.
2. Tyagi M.S., Nijs J.F., Van Overstraeten R.J. Effect of surface recombination velocity on the transient decay of excess carriers produced by short-wavelength laser pulses. Solid-State Electron. 25:1982;411-415.
3. Tyagi M.S., Van Overstraeten R.J. Minority carrier recombination in heavily doped silicon. Solid-State Electron. 26:1983;577-597.
4. Luke K.-L., Cheng L. Analysis of the interaction of a laser pulse with a silicon wafer. determination of bulk lifetime and surface recombination velocity J. Appl. Phys. 61:1987;2282-2293.
5. S.W. Glunz, A.B. Sproul, S. Sterk, W. Warta, Understanding effective lifetimes measured on oxidized silicon wafers with different techniques, in: 12th European PV Solar Energy Conference, Amsterdam, 1994, pp. 492-495.
6. Schroder D.K. Carrier lifetimes in silicon. IEEE Trans. Electron Dev. 44:1997;160-170.
7. Sproul A.B. Dimensionless solution of the equation describing the effect of surface recombination of carrier decay in semiconductors. J. Appl. Phys. 76:1994;2851-2854.
8. R. Sinton, A. Cuevas, M. Stuckings, Quasi-steady-state photoconductance, a new method for solar cell material and device characterization, in: 25th Photovoltaics Specialists Conference, Washington, DC, 1996, pp. 457-460.
9. R. Sinton, Possibilities for process-control monitoring of electronic material properties during solar-cell manufacture, in: Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes, Breckenridge, Colorado, 1999, pp. 67-73.
10. MacDonald D., Cuevas A. Trapping of minority carriers in multicrystalline silicon. Appl. Phys. Lett. 74:1999;1710-1712.
11. Nagel H., Berge C., Aberle A. Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors. J. Appl. Phys. 86:1999;6218-6221.
12. Brody J., Rohatgi A. Sensitivity analysis of two-spectrum separation of surface and bulk components of minority carrier lifetimes. Solid-State Electron. 46:2002;859-866.
13. A. Aberle, Crystalline silicon solar cells: advanced surface passivation and analysis, University of New South Wales, Sydney, 1999.
14. H. Nagel, et al., Relationship between effective carrier lifetimes in silicon determined under transient and steady-state illumination, in: 16th European Photovoltaic Specialist Conference, Glasgow, UK, 2000.
15. M'Saad H., Michel J., Lappe J.J., Kimerling L.C. Monitoring and optimization of silicon surface quality. J. Electrochem. Soc. 142:1995;2833-2835.