Near-surface defects in hydrogen-plasma-treated boron-doped silicon studied by positron beam spectroscopy

Applied Physics A: Materials Science and Processing

Volumn 68, Issue 6, 1999, Pages 643-645

  Gonzalez, C E ^a,d   Sharma, S C ^a   Hozhabri, N ^b   Chi, D Z ^c   Ashok, S ^c  

^a UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

^b NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^c The Pennsylvania State University   (United States)

^d TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRON CYCLOTRON RESONANCE; HYDROGEN; PLASMA APPLICATIONS; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SPECTROSCOPY;

DOPPLER BROADENING SPECTRA; POSITRON BEAM SPECTROSCOPY;

SILICON WAFERS;

EID: 0032628248     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050954     Document Type: Article

References (16)

1. C.W. Nam, S. Ashok: J. Appl. Phys. 77, 2819 (1995)
2. C.W. Nam, S. Ashok, T. Sekiguchi: J. Vac. Sci. Technol. B 15, 226 (1997)
3. A.S. Yapsir, G.F. Wiltshire, J.P. Gambino, R.H. Kastl, C.C. Parks: J. Vac. Sci. Technol. A 8, 2939 (1990)
4. S. Kar, S. Ashok: J. Appl. Phys. 73, 2187 (1993)
5. N. Adachi, H. Nishikawa, Y. Komatsu, H. Hourai, M. Sano, T. Shigematsu: In Defect Engineering in Semiconductor Growth, Processing and Device Technology, ed. by S. Ashok, J. Chevallier, K. Sumino, E. Weber (Materials Research Society, Pittsburgh, PA 1992) p. 815
6. J. Lyding, K. Hess: Appl. Phys. Lett. 68, 2526 (1996)
7. For example, see papers in "Defect Engineering in Semiconductor Growth, Processing and Device Technology", ed. by Ashok, J. Chevallier, K. Sumino, E. Weber (Materials Research Society, Pittsburgh 1992); P. Stallinga, T. Gregorkiewicz, C.A.J. Ammerlaan, Y.V. Gorelkinskii: Phys. Rev. Lett. 71, 117 (1993); N.H. Nickel, W.B. Jackson, J. Walker: Phys. Rev. B 53, 7750 (1996)
8. For example, see papers in "Defect Engineering in Semiconductor Growth, Processing and Device Technology", ed. by Ashok, J. Chevallier, K. Sumino, E. Weber (Materials Research Society, Pittsburgh 1992); P. Stallinga, T. Gregorkiewicz, C.A.J. Ammerlaan, Y.V. Gorelkinskii: Phys. Rev. Lett. 71, 117 (1993); N.H. Nickel, W.B. Jackson, J. Walker: Phys. Rev. B 53, 7750 (1996)
9. For example, see papers in "Defect Engineering in Semiconductor Growth, Processing and Device Technology", ed. by Ashok, J. Chevallier, K. Sumino, E. Weber (Materials Research Society, Pittsburgh 1992); P. Stallinga, T. Gregorkiewicz, C.A.J. Ammerlaan, Y.V. Gorelkinskii: Phys. Rev. Lett. 71, 117 (1993); N.H. Nickel, W.B. Jackson, J. Walker: Phys. Rev. B 53, 7750 (1996)
10. S.M. Myers, M.I. Baskes, H.K. Birnbaum, J.W. Corbett, G.G. DeLeo, S.K. Estreicher, E.E. Haller, P. Jena, N.M. Johnson, R. Kirchheim, S.J. Pearton, M.J. Stavola: Rev. Mod. Phys. 64, 559 (1992)
11. S. Ashok, K. Srinath: In Plasma Processing of Materials, ed. by J.J. Pouch, S.A. Alterovitz (Materials Science Forum, Trans Tech Publications 1993)
12. P.A. Kumar, H.J. Stein, K.G. Lynn: Appl. Phys. Lett. 64, 1684 (1994)
13. S.C. Sharma: Integrated Thin Films and Applications, Ceramic Transactions 86, 145 (1998)
14. A. van Veen, H. Schut, J. de Vries, R.A. Halvoort, M.R. Ijpma: AIP Conf. Proc. 218 (AIP, New York 1990) p. 171
15. S. Mantl, W. Thriftshauser: Phys. Rev. B 17, 1645 (1978)
16. S.C. Sharma, N. Hozhabri, R.C. Hyer, M.F. Pas, S. Kim: Appl. Phys. Lett. 61, 1939 (1992)