Chemically induced disordering of Si (100) surfaces upon SC1/SC2 etching analysed by high-resolution transmission electron microscopy

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 73, Issue 1, 2000, Pages 154-157

  Bollani, M ^a   Fares, L ^a   Charai A ^a   Narducci, D ^b  

^a CNRS   (France)

^b V ^*  (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CRYSTAL STRUCTURE; ELECTRON ENERGY LOSS SPECTROSCOPY; ETCHING; FLUORINE; LOW ENERGY ELECTRON DIFFRACTION; OXIDATION; OXYGEN; SURFACE ROUGHNESS; SURFACE STRUCTURE; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY;

CHEMICALLY INDUCED DISORDERING; STRUCTURAL MODIFICATION;

SILICON WAFERS;

EID: 0033891206     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00448-1     Document Type: Article

References (6)

1. Kern W., Puotinen D.A. RCA Rev. 31:1970;187.
2. M. Heyns, C. Hasenack, R. De Keersmaecker, R. Falster, in: J. Ruzyllo, E.E. Novak (Eds), Proceedings of the 1st International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, PV 90-9, The Electrochemical Society, Pennington, NJ, 1990, pp. 293-298.
3. S. Verhaverbeke, Dielectric breakdown in thermally grown oxide layers, Ph.D. Thesis, Katholieke Universiteit Leuven, 1993, pp. 125-220.
4. Higashi G.S., Chabal Y.J., Trucks G.W., Raghavachari K. Appl. Phys. Lett. 56:1990;656.
5. Higashi G.S., Chabal Y.J. Appl. Phys. Lett. 56:1990;65.
6. Higashi G.S., Becker R.S., Chabal Y.J. Appl. Phys. Lett. 58:1991;1656.