Modeling and analysis of leakage currents in double-gate technologies

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 25, Issue 10, 2006, Pages 2052-2061

  Mukhopadhyay, Saibal ^a,b   Kim, Keunwoo ^a,c   Chuang, Ching Te ^a,c   Roy, Kaushik ^a,b  

^a IEEE   (United States)

^b Purdue University   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Double gate transistor; Gate leakage; Modeling; Subthreshold leakage

Indexed keywords

DOUBLE-GATE TRANSISTORS; GATE LEAKAGE; PARAMETRIC VARIATIONS; SUBTHRESHOLD LEAKAGE;

COMPUTER SIMULATION; ELECTRIC CURRENTS; GATES (TRANSISTOR); INTEGRATED CIRCUITS; LEAKAGE CURRENTS; THRESHOLD VOLTAGE;

MICROELECTRONICS;

EID: 33748323313     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAD.2006.873892     Document Type: Article

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