Study of asymmetric charge writing on Pb(Zr,Ti)O 3 thin films by Kelvin probe force microscopy

Applied Surface Science

Volumn 252, Issue 22, 2006, Pages 8018-8021

  Shen, Jian ^a   Zeng, Huizhong ^a   Wang, Zhihong ^a   Lu, Shengbo ^a   Huang, Huidong ^a   Liu, Jingsong ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Asymmetric charge writing; Internal field; Kelvin probe force microscopy; PZT thin film

Indexed keywords

ELECTRIC SWITCHES; ELECTRODES; FERROELECTRIC MATERIALS; LEAD COMPOUNDS; MAGNETRON SPUTTERING; POLYCRYSTALLINE MATERIALS;

ASYMMETRIC CHARGE WRITING; INTERNAL FIELDS; KELVIN PROBE FORCE MICROSCOPY; PZT THIN FILMS;

THIN FILMS;

EID: 33747890459     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.01.078     Document Type: Article

References (22)

1. Mamin H.J., and Rugar D. Appl. Phys. Lett. 61 (1992) 1003
2. Barrett R.C., and Quate C.F. J. Appl. Phys. 70 (1991) 2725
3. Kalinin S.V., and Bonnell D.A. Phys. Rev. B 63 (2001) 125411
4. Roelofs A., Bottger U., Waser R., Schlaphof F., Trogisch S., and Eng L.M. Appl. Phys. Lett. 77 (2000) 3444
5. Chung I., Jang D., Heo J., Lee J., Yastake M., and Yi I. Jpn. J. Appl. Phys. 41 (2002) 6743
6. Tybell T., Paruch P., Giamarchi T., and Triscone J.-M. Phys. Rev. Lett. 89 (2002) 097601
7. Zavala G., Fendler J.H., and Trolier-McKinstry S. J. Appl. Phys. 81 (1997) 7480
8. Gruverman A., Auciello O., and Tokumoto H. Appl. Phys. Lett. 69 (1996) 3191
9. Gruverman A., Kholkin A., Kingon A., and Tokumoto H. Appl. Phys. Lett. 78 (2001) 2751
10. Chen X.Q., Yamada H., Horiuchi T., Matsushige K., Watanabe S., Kawai M., and Weiss P.S. J. Vac. Sci. Technol. B. 17 (1999) 1930
11. Son J.Y., Bang S.H., and Cho J.H. Appl. Phys. Lett. 82 (2003) 3505
12. Son J.Y., Kim B.G., Kim C.H., and Cho J.H. Appl. Phys. Lett. 84 (2004) 4971
13. Jacobs H.O., Knapp H.F., and Stemmer A. Rev. Sci. Instrum. 70 (1999) 1756
14. Nakamura T., Nakao Y., Kamisawa A., and Takasu H. Jpn. J. Appl. Phys. 33 (1994) 5207
15. Zhou Y., Chan H.K., Lam C.H., and Shin F.G. J. Appl. Phys. 98 (2005) 024111
16. Tagantsev A.K., Stolichnov I., Setter N., and Cross J.S. J. Appl. Phys. 96 (2004) 6616
17. Watts B., Leccabue F., Tallarida G., Ferrari S., Fanciulli M., and Padeletti G. J. Electroceram. 11 (2003) 139
18. Watts B., Leccabue F., Bocelli G., Padeletti G., Kaciulis S., and Pandolfi L. J. Eur. Ceram. Soc. 25 (2005) 2495
19. Grossmann M., Lohse O., Bolten D., Boettger U., Schneller T., and Waser R. J. Appl. Phys. 92 (2002) 2680
20. Grossmann M., Lohse O., Bolten D., Boettger U., and Waser R. J. Appl. Phys. 92 (2002) 2688
21. Ellerkmann U., Schorn P., Bolten D., Boettger U., Waser R., Bruchhaus R., and Yamakawa K. Integr. Ferroelectr. 52 (2003) 63
22. Rodriguez B.J., Gruverman A., Kingon A.I., Nemanich R.J., and Cross J.S. J. Appl. Phys. 95 (2004) 1958