Application of scanning probe microscope for novel characterization of ferroelectric capacitor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 11 B, 2002, Pages 6743-6748

  Chung, Ilsub ^a   Jang, Dongmin ^a   Heo, Jinhee ^a   Lee, Junekey ^b   Yastake, Masatoshi ^c   Insook, Y I ^d  

^a Sungkyunkwan University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c SEIKO INSTRUMENTS INC   (Japan)

^d OSAKA UNIVERSITY   (Japan)

Author keywords

Conductivity mapping image; FRAM; Hysteresis measurement; KFM; SPM

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; FERROELECTRIC DEVICES; THIN FILMS;

CONDUCTIVITY MAPPING IMAGE; FRAM; HYSTERESIS MEASUREMENT; KFM; SPM;

CAPACITORS;

EID: 3142511620     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.6743     Document Type: Article

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