High-quality ZnO films grown by atmospheric pressure metal- organic chemical vapor deposition

Journal of Crystal Growth

Volumn 283, Issue 1-2, 2005, Pages 87-92

  Wang, Li ^a   Pu, Yong ^a   Fang, Wenqing ^a   Dai, Jiangnan ^a   Chen, Yufeng ^a   Mo, Chunlan ^a   Jiang, Fengyi ^a  

^a NANCHANG UNIVERSITY   (China)

Author keywords

A1. Dislocation density; A1. Exciton; A3. MOCVD; B1. ZnO

Indexed keywords

ATMOSPHERIC PRESSURE; ATOMIC FORCE MICROSCOPY; EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

BUFFER LAYERS; DISLOCATION DENSITY; FILM QUALITY; STRUCTURAL QUALITY;

THIN FILMS;

EID: 24144445850     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.05.040     Document Type: Article

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