Auger recombination-enhanced hot carrier degradation in nMOSFETs with a forward substrate bias

IEEE Transactions on Electron Devices

Volumn 50, Issue 4, 2003, Pages 1022-1026

  Tsai, C W ^a   Chen, M C ^a   Ku, S H ^a   Wang, Tahui ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Auger recombination; Forward substrate bias; Hot carrier degradation; Positive temperature dependence

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRONS; HOT CARRIERS; SUBSTRATES; THERMAL EFFECTS;

HOT CARRIER DEGRADATION;

MOSFET DEVICES;

EID: 0037480825     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.812484     Document Type: Article

References (23)

1. K. G. Anil, S. Mahapatra, and I. Eisele, "Role of inversion layer quantization on sub-bandgap impact ionization in deep-sub-micron n-channel MOSFETs," in IEDM Tech. Dig., 2000, pp. 675-678.
2. A. Abramo, C. Fiegna, and F. Venturi, "Hot carrier effects in short MOSFET's at low applied voltages," in IEDM Tech. Dig., 1995, pp. 301-304.
3. A. Ghetti, L. Selmi, R. Bez, and E. Sangiorgi, "Monte Carlo simulation of low voltage hot carrier effects in non volatile memory cells," in IEDM Tech. Dig., 1996, pp. 379-382.
4. J. Tang and K. Hess, "Theory of hot electron emission from silicon into silicon dioxide," J. Appl. Phys., vol. 54, pp. 5145-5151, 1983.
5. 2 interfacial barrier," IEEE Electron Device Lett., vol. EDL-6, pp. 513-515, 1985.
6. B. Ricco, E. Sangiorgi, and D. Cantarelli, "Low-voltage hot-electron effects in short channel MOSFETs," in IEDM Tech. Dig., 1984, pp. 92-95.
7. M. Yamaji, K. Tanigushi, C. Hamaguchi, K. Sukegawa, and S. Kawamura, "Degradation mechanisms of thin film SIMOX SOI-MOSFET characteristics-optical and electrical evaluations," IEICE Trans. Electron, vol. E77-C, pp. 373-378, 1994.
8. C. W. Tsai, S. H. Gu, L. P. Chiang, T. Wang, Y. C. Liu, L. S. Huang, M. C. Wang, and L. C. Hsia, "Valence-band tunneling enhanced hot carrier degradation in ultra-thin oxide nMOSFETs," in IEDM Tech. Dig., 2000, pp. 139-142.
9. W. K. Yen, W. H. Wang, Y. K. Fang, and F. L. Yang, "Temperature dependence of hot-carrier-induced degradation in 0.1 μm SOI nMOSFET's with thin oxide," IEEE Electron Device Lett., vol. 23, pp. 425-427, July 2002.
10. L. P. Chiang, C. W. Tsai, T. Wang, U. C. Liu, M. C. Wang, and L. C. Hsia, "Auger recombination enhanced hot carrier degradation in nMOSFET's with positive substrate bias," in Symp. VLSI Tech., 2000, pp. 132-133.
11. J. A. Babcock, P. Francis, H. Haggag, J. Darmawan, T. W. Lee, P. Lindorfer, C. Olgaard, R. B. Merrill, and D. K. Schroder, "Effect of body-to-source bias on the analog characteristics of 0.35μm partially depleted SOI CMOS for low-voltage low-power mixed-mode applications," in IEEE Int. SOI Conf., 1998, pp. 25-26.
12. T. L. Hsu, D. D. Tang, and J. Gong, "Low-frequency noise properties of dynamic-threshold (DT) MOSFET's," IEEE Electron Device Lett., vol. 20, pp. 532-534, Oct. 1999.
13. F. Assaderaghi, D. Sinitsky, S. A. Parke, J. Bokor, P. K. Ko, and C. Hu, "Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI," IEEE Tran. Electron Devices, vol. 44, pp. 414-422, Mar. 1997.
14. H. Kotaki, S. Kakimoto, M. Nakano, T. Matsuoka, K. Adachi, K. Sugimoto, T. Fukushima, and Y. Sato, "Novel bulk dynamic threshold voltage MOSFET (B-DTMOS) with advanced isolation (SITOS) and gate to shallow-well contact (SSS-C) process for ultra low power dual gate CMOS," in IEDM Tech. Dig., 1996, pp. 459-462.
15. Y. Momiyama, T. Hirose, H. Kurata, K. Goto, Y. Watanabe, and T. Sugii, "A 140 GHz ft and 60 GHz fmax DTMOS integrated with high-performance SOI logic technology," in IEDM Tech. Dig., 2000, pp. 451-454.
16. I. Y. Chung, Y. J. Park, and H. S. Min, "A new SOI inverter for low power applications," in IEEE Int. SOI Conf., 1996, pp. 20-21.
17. C. Y. Chang, J. G. Su, H. M. Hsu, S. C. Wong, T. Y. Huang, and Y. C. Sun, "Investigations of bulk dynamic threshold-voltage MOSFET with 65 GHz 'normal-mode' ft and 220 GHz 'over-drive mode' ft for RF applications," in Symp. VLSI Tech., 2001, pp. 89-90.
18. E. Inuzuka and H. Suzki, "Emission microscopy in semiconductor failure analysis," in IMPC, 1994, pp. 1492-1496.
19. A. Toriumi, M. Yoshimi, M. Iwase, Y. Akiyama, and K. Taniguchi, "A study of photon emission from n-channel MOSFETs," IEEE Trans. Electron Devices, vol. 34, pp. 1501-1508, 1987.
20. M. Lanzoni, E. Sangiorgi, C. Fiegna, M. Manfredi, and B. Ricco, "Extended (1.1-2.9eV) hot-carrier-induced photon emission in n-channel Si MOSFET's," IEEE Electron Device Lett., vol. 12, pp. 341-343, June 1991.
21. R. Brelerdow, W. Weber, D. Schmitt-Landsiedel, and R. Thewes, "Hot carrier dependence of the low-frequency noise in MOS transistors under analog and RF operating conditions," IEEE Trans. Electron Devices, vol. 49, pp. 1588-1596, Sept. 2002.
22. D. Esseni, L. Selmi, E. Sangiorgi, R. Bez, and B. Ricco, "Temperature dependence of gate and substrate currents in the CHE crossover regime," IEEE Electron Device Lett., vol. 16, pp. 506-508, Dec. 1995.
23. L. Huldt, N. G. Nilsson, and K. G. Svantesson, "The temperature dependence of band-to-band Auger recombination in silicon," Appl. Phys. Lett., vol. 35, pp. 776-777, 1979.