Electrically active defects in AlGaN alloys grown by metalorganic chemical vapor deposition

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 130-133

  Seghier, D ^a   Gislason, H P ^a  

^a UNIVERSITY OF ICELAND   (Iceland)

Author keywords

AlGaN; Conductivity; Defects; Metalorganic chemical vapor deposition grown

Indexed keywords

BINDING ENERGY; CAPACITANCE; CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTIVITY; ELECTRONS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; VOLTAGE MEASUREMENT;

MOLE FRACTION;

CRYSTAL DEFECTS;

EID: 0035677710     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00714-1     Document Type: Article

References (8)