The influence of SiON film composition on HIGFET characteristics

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 85, Issue 5, 2002, Pages 50-58

  Ohshika, Katsushi ^a   Kuroda, Jun ^a   Yanazawa, Hiroshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

Device fabrication; Gate leak current; HIGFET; Interfacial reaction; Passivation; Reliability; SiON

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COMPOSITION; HETEROJUNCTIONS; LEAKAGE CURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; RELIABILITY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

HETEROSTRUCTURE INSULATED GATE FIELD EFFECT TRANSISTORS (HIGFET);

FIELD EFFECT TRANSISTORS;

EID: 0036571085     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/ecjb.1107     Document Type: Article

References (7)

1. Mechanism of generation of gate leak current in GaAsHIGFET
2. Generation mechanism of gate leakage current due to reverse-voltage stress in i-AlGaAs/n-GaAs HIGFET's
3. Optimization of SiON film compositions for encapsulation of refractory metal gate GaAs metal-semiconductor field effect transistor
4. +-GaAs selectively grown by MOCVD
5. Development and application of an apparatus for measuring mechanical properties of thin films at high temperatures
6. A novel passivation technique of GaAs power MESFETs
7. Influence of stoichiometry of passivation interface on withstanding voltage of GaAsMESFET