메뉴 건너뛰기




Volumn 15, Issue 4, 2006, Pages 859-863

Silicon-carbide microfabrication by silicon lost molding for glass-press molds

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; MOLDING; PHASE TRANSITIONS; POLYCRYSTALLINE MATERIALS; SINTERING; SUBSTRATES; SURFACE ROUGHNESS;

EID: 33747447703     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2006.872231     Document Type: Article
Times cited : (11)

References (14)
  • 1
    • 0032139423 scopus 로고    scopus 로고
    • "Silicon carbide MEMS for harsh environments"
    • in
    • M. Megregany, C. A. Zorman, N. Rajan, and C. H. Wu, "Silicon carbide MEMS for harsh environments," in Proc. IEEE, 1998, vol. 86, pp. 1594-1610.
    • (1998) Proc. IEEE , vol.86 , pp. 1594-1610
    • Megregany, M.1    Zorman, C.A.2    Rajan, N.3    Wu, C.H.4
  • 2
    • 26844486446 scopus 로고    scopus 로고
    • "Quartz glass molding by precision glass molding method"
    • (in [in Japanese])
    • H. Maehara and H. Murakoshi, "Quartz glass molding by precision glass molding method," (in [in Japanese]) Trans. Inst. Elect. Eng. Japan, vol. 122-E, pp. 494-497, 2002.
    • (2002) Trans. Inst. Elect. Eng. Japan , vol.122 E , pp. 494-497
    • Maehara, H.1    Murakoshi, H.2
  • 3
    • 0022598669 scopus 로고
    • "Reactive ion etching of SiC thin films using fluorinated gases"
    • J. Sugiura, W.-J. Lu, K. C. Cadien, and J. Steckl, "Reactive ion etching of SiC thin films using fluorinated gases," J. Vac. Sci. Technol. B, vol. 4, pp. 349-354, 1986.
    • (1986) J. Vac. Sci. Technol. B , vol.4 , pp. 349-354
    • Sugiura, J.1    Lu, W.-J.2    Cadien, K.C.3    Steckl, J.4
  • 5
    • 0029358009 scopus 로고
    • "Residue-free reactive ion etching of 3C-SiC and 6H-SiC in fluorinated mixture plasmas"
    • P. H. Yih and A. J. Steckl, "Residue-free reactive ion etching of 3C-SiC and 6H-SiC in fluorinated mixture plasmas," J. Electrochem. Soc., vol. 142, pp. 2853-2860, 1995.
    • (1995) J. Electrochem. Soc. , vol.142 , pp. 2853-2860
    • Yih, P.H.1    Steckl, A.J.2
  • 7
    • 0031122664 scopus 로고    scopus 로고
    • "Fabrication of smooth β-SiC surfaces by reactive ion etching using a graphite electrode"
    • W. Reichert, D. Stefan, E. Obermeier, and W. Wondrak, "Fabrication of smooth β-SiC surfaces by reactive ion etching using a graphite electrode," Mat. Sci. Eng., vol. B46, pp. 190-194, 1997.
    • (1997) Mat. Sci. Eng. , vol.B46 , pp. 190-194
    • Reichert, W.1    Stefan, D.2    Obermeier, E.3    Wondrak, W.4
  • 10
    • 0035535265 scopus 로고    scopus 로고
    • "Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanism"
    • P. Chabert, "Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanism," J. Vac. Sci. Technol. B, vol. 19, pp. 1339-1345, 2001.
    • (2001) J. Vac. Sci. Technol. B , vol.19 , pp. 1339-1345
    • Chabert, P.1
  • 12
    • 0032595009 scopus 로고    scopus 로고
    • "Fabrication and testing of micromachined silicon carbide and nickel fuel atomizers for gas turbine engines"
    • N. Rajan, M. Mehregany, C. A. Zorman, S. Stefanescu, and T. P. Kicher, "Fabrication and testing of micromachined silicon carbide and nickel fuel atomizers for gas turbine engines," J. Microelectromech. Syst., vol. 8, pp. 251-257, 1999.
    • (1999) J. Microelectromech. Syst. , vol.8 , pp. 251-257
    • Rajan, N.1    Mehregany, M.2    Zorman, C.A.3    Stefanescu, S.4    Kicher, T.P.5
  • 13
  • 14
    • 0005140209 scopus 로고    scopus 로고
    • "Solid-state reaction bonding of silicon carbide (HIP-SiC) below 1000°C"
    • K. Bhanumurthy and R. Schmid-Fetzer, "Solid-state reaction bonding of silicon carbide (HIP-SiC) below 1000°C," Mater. Sci. Eng., vol. A220, pp. 35-40, 1996.
    • (1996) Mater. Sci. Eng. , vol.A220 , pp. 35-40
    • Bhanumurthy, K.1    Schmid-Fetzer, R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.