-
1
-
-
0032139423
-
"Silicon carbide MEMS for harsh environments"
-
in
-
M. Megregany, C. A. Zorman, N. Rajan, and C. H. Wu, "Silicon carbide MEMS for harsh environments," in Proc. IEEE, 1998, vol. 86, pp. 1594-1610.
-
(1998)
Proc. IEEE
, vol.86
, pp. 1594-1610
-
-
Megregany, M.1
Zorman, C.A.2
Rajan, N.3
Wu, C.H.4
-
2
-
-
26844486446
-
"Quartz glass molding by precision glass molding method"
-
(in [in Japanese])
-
H. Maehara and H. Murakoshi, "Quartz glass molding by precision glass molding method," (in [in Japanese]) Trans. Inst. Elect. Eng. Japan, vol. 122-E, pp. 494-497, 2002.
-
(2002)
Trans. Inst. Elect. Eng. Japan
, vol.122 E
, pp. 494-497
-
-
Maehara, H.1
Murakoshi, H.2
-
3
-
-
0022598669
-
"Reactive ion etching of SiC thin films using fluorinated gases"
-
J. Sugiura, W.-J. Lu, K. C. Cadien, and J. Steckl, "Reactive ion etching of SiC thin films using fluorinated gases," J. Vac. Sci. Technol. B, vol. 4, pp. 349-354, 1986.
-
(1986)
J. Vac. Sci. Technol. B
, vol.4
, pp. 349-354
-
-
Sugiura, J.1
Lu, W.-J.2
Cadien, K.C.3
Steckl, J.4
-
5
-
-
0029358009
-
"Residue-free reactive ion etching of 3C-SiC and 6H-SiC in fluorinated mixture plasmas"
-
P. H. Yih and A. J. Steckl, "Residue-free reactive ion etching of 3C-SiC and 6H-SiC in fluorinated mixture plasmas," J. Electrochem. Soc., vol. 142, pp. 2853-2860, 1995.
-
(1995)
J. Electrochem. Soc.
, vol.142
, pp. 2853-2860
-
-
Yih, P.H.1
Steckl, A.J.2
-
7
-
-
0031122664
-
"Fabrication of smooth β-SiC surfaces by reactive ion etching using a graphite electrode"
-
W. Reichert, D. Stefan, E. Obermeier, and W. Wondrak, "Fabrication of smooth β-SiC surfaces by reactive ion etching using a graphite electrode," Mat. Sci. Eng., vol. B46, pp. 190-194, 1997.
-
(1997)
Mat. Sci. Eng.
, vol.B46
, pp. 190-194
-
-
Reichert, W.1
Stefan, D.2
Obermeier, E.3
Wondrak, W.4
-
8
-
-
0031118287
-
2 gas mixtures"
-
2 gas mixtures," Mat. Sci. Eng., vol. B46, pp. 160-163, 1997.
-
(1997)
Mat. Sci. Eng.
, vol.B46
, pp. 160-163
-
-
Richter, C.1
Espertshuber, K.2
Wagner, C.3
Eickhoff, M.4
Krötz, G.5
-
10
-
-
0035535265
-
"Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanism"
-
P. Chabert, "Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanism," J. Vac. Sci. Technol. B, vol. 19, pp. 1339-1345, 2001.
-
(2001)
J. Vac. Sci. Technol. B
, vol.19
, pp. 1339-1345
-
-
Chabert, P.1
-
11
-
-
0035519479
-
"Deep reactive ion etching of silicon carbide"
-
S. Tanaka, K. Rajanna, T. Abe, and M. Esashi, "Deep reactive ion etching of silicon carbide," J. Vac. Sci. Technol. B, vol. 19, pp. 2173-2176, 2001.
-
(2001)
J. Vac. Sci. Technol. B
, vol.19
, pp. 2173-2176
-
-
Tanaka, S.1
Rajanna, K.2
Abe, T.3
Esashi, M.4
-
12
-
-
0032595009
-
"Fabrication and testing of micromachined silicon carbide and nickel fuel atomizers for gas turbine engines"
-
N. Rajan, M. Mehregany, C. A. Zorman, S. Stefanescu, and T. P. Kicher, "Fabrication and testing of micromachined silicon carbide and nickel fuel atomizers for gas turbine engines," J. Microelectromech. Syst., vol. 8, pp. 251-257, 1999.
-
(1999)
J. Microelectromech. Syst.
, vol.8
, pp. 251-257
-
-
Rajan, N.1
Mehregany, M.2
Zorman, C.A.3
Stefanescu, S.4
Kicher, T.P.5
-
13
-
-
0035278834
-
"Silicon carbide micro-reaction-sintering using micromachined silicon molds"
-
S. Tanaka, S. Sugimoto, J.-F. Li, R. Watanabe, and M. Esashi, "Silicon carbide micro-reaction-sintering using micromachined silicon molds," J. Microelectromech. Syst., vol. 10, pp. 55-61, 2001.
-
(2001)
J. Microelectromech. Syst.
, vol.10
, pp. 55-61
-
-
Tanaka, S.1
Sugimoto, S.2
Li, J.-F.3
Watanabe, R.4
Esashi, M.5
-
14
-
-
0005140209
-
"Solid-state reaction bonding of silicon carbide (HIP-SiC) below 1000°C"
-
K. Bhanumurthy and R. Schmid-Fetzer, "Solid-state reaction bonding of silicon carbide (HIP-SiC) below 1000°C," Mater. Sci. Eng., vol. A220, pp. 35-40, 1996.
-
(1996)
Mater. Sci. Eng.
, vol.A220
, pp. 35-40
-
-
Bhanumurthy, K.1
Schmid-Fetzer, R.2
|