-
1
-
-
33745905893
-
-
J. Appl. Phys., vol. 70, pp. R53-R80, 1991
-
S. M. Hu, "Stress-related problems in silicon technology," J. Appl. Phys., vol. 70, pp. R53-R80, 1991.
-
"Stress-related Problems in Silicon Technology,"
-
-
Hu, S.M.1
-
2
-
-
0019916789
-
-
IEEE Trans. Electron Devices, vol. ED- 29, pp. 64-70, 1982
-
Y. Kanda, "A graphical representation of the piezoresistance coefficients in silicon," IEEE Trans. Electron Devices, vol. ED-29, pp. 64-70, 1982.
-
"A Graphical Representation of the Piezoresistance Coefficients in Silicon,"
-
-
Kanda, Y.1
-
3
-
-
33747404912
-
-
Jpn. J. Appl. Phys., vol. 6, pp. 475-486, 1967
-
Y. Kanda, "Effects of stress on germanium and silicon p-n junctions," Jpn. J. Appl. Phys., vol. 6, pp. 475-486, 1967.
-
"Effects of Stress on Germanium and Silicon P-n Junctions,"
-
-
Kanda, Y.1
-
4
-
-
0000260326
-
-
J. Appl. Phys., vol. 64, pp. 276-282, 1988
-
B. Halg, "Piezo-Hall coefficients of n-type silicon," J. Appl. Phys., vol. 64, pp. 276-282, 1988.
-
"Piezo-Hall Coefficients of N-type Silicon,"
-
-
Halg, B.1
-
6
-
-
0030416122
-
-
in IEDM, 1996
-
H. Tuinhout, M. Pelgrom, R. P. de Vries, and M. Vertregt, "Effects of metal coverage on MOSFET matching," in IEDM, 1996.
-
"Effects of Metal Coverage on MOSFET Matching,"
-
-
Tuinhout, H.1
Pelgrom, M.2
De Vries, R.P.3
Vertregt, M.4
-
7
-
-
0030081591
-
-
Semicond. Sci. Technol., vol. 11, pp. 139-154, 1996
-
I. De Wolf, "Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits," Semicond. Sci. Technol., vol. 11, pp. 139-154, 1996.
-
"Micro-Raman Spectroscopy to Study Local Mechanical Stress in Silicon Integrated Circuits,"
-
-
De Wolf, I.1
-
8
-
-
0000704120
-
-
J. Appl. Phys., vol. 78, pp. 1614-1622, 1995
-
Q. Ma, S. Chiras, D. R. Clarke, and Z. Suo, "High-resolution determination of the stress in individual interconnect lines and the variation due to electromigration," J. Appl. Phys., vol. 78, pp. 1614-1622, 1995.
-
"High-resolution Determination of the Stress in Individual Interconnect Lines and the Variation Due to Electromigration,"
-
-
Ma, Q.1
Chiras, S.2
Clarke, D.R.3
Suo, Z.4
-
9
-
-
85176525906
-
-
Appl. Phys. Lett., vol. 50, p. 725, 1987
-
R. E. Jones and M. L. Basehore, "Stress analysis of encapsulated fine-line aluminum interconnect," Appl. Phys. Lett., vol. 50, p. 725, 1987.
-
"Stress Analysis of Encapsulated Fine-line Aluminum Interconnect,"
-
-
Jones, R.E.1
Basehore, M.L.2
-
10
-
-
0001486246
-
-
Appl. Phys. Lett., vol. 65, p. 1516, 1994
-
L. T. Shi and K. N. Tu, "Finite-element modeling of stress distribution and migration in interconnecting studs of a three-dimensional multilevel device structure," Appl. Phys. Lett., vol. 65, p. 1516, 1994.
-
"Finite-element Modeling of Stress Distribution and Migration in Interconnecting Studs of a Three-dimensional Multilevel Device Structure,"
-
-
Shi, L.T.1
Tu, K.N.2
-
11
-
-
0026868979
-
-
IEEE Trans. Semiconduct. Manufact., vol. 5, p. 128, 1992
-
A. O. Cifuentes and I. A. Shareef, "Modeling of multilevel structures: A general method for analyzing stress evolution during processing," IEEE Trans. Semiconduct. Manufact., vol. 5, p. 128, 1992.
-
"Modeling of Multilevel Structures: a General Method for Analyzing Stress Evolution during Processing,"
-
-
Cifuentes, A.O.1
Shareef, I.A.2
-
12
-
-
0000881016
-
-
Appl. Phys. Lett., vol. 58, p. 1845, 1991
-
B. Greenebaum, A. Sauter, P. A. Flinn, and W. D. Nix, "Stress in metal lines under passivation; comparison of experiment with finite element calculations," Appl. Phys. Lett., vol. 58, p. 1845, 1991.
-
"Stress in Metal Lines under Passivation; Comparison of Experiment with Finite Element Calculations,"
-
-
Greenebaum, B.1
Sauter, A.2
Flinn, P.A.3
Nix, W.D.4
-
13
-
-
0032485135
-
-
Electron. Lett., vol. 34, p. 471, 1998
-
P. M. Igic and P. A. Mawby, "Finite element modeling of the thermal stress field during processing of VLSI multilevel structures," Electron. Lett., vol. 34, p. 471, 1998.
-
"Finite Element Modeling of the Thermal Stress Field during Processing of VLSI Multilevel Structures,"
-
-
Igic, P.M.1
Mawby, P.A.2
-
15
-
-
0011743872
-
-
Rockfield Software Ltd
-
ELFEN User's Manual: Rockfield Software Ltd.
-
ELFEN User's Manual
-
-
-
16
-
-
0000365719
-
-
J. Appl. Phys., vol. 68, pp. 328-333, 1990
-
H. Niwa, H. Yagi, H. Tsuchikawa, andM. Kato, "Stress distribution in an aluminum interconnect of very large scale integration," J. Appl. Phys., vol. 68, pp. 328-333, 1990.
-
"Stress Distribution in an Aluminum Interconnect of Very Large Scale Integration,"
-
-
Niwa, H.1
Yagi, H.2
Tsuchikawa, H.3
Kato, A.4
-
17
-
-
0032083615
-
-
in Proc. 9th Eur. Symp. Reliability of Electron Devices, 1998, pp. 1069-1073
-
D. Manic, Y Haddab, and R. S. Popovic, "On-wafer heating tests to study stability of silicon devices," in Proc. 9th Eur. Symp. Reliability of Electron Devices, 1998, pp. 1069-1073.
-
"On-wafer Heating Tests to Study Stability of Silicon Devices,"
-
-
Manic, D.1
Haddab, Y.2
Popovic, R.S.3
-
18
-
-
0026219178
-
-
Electron. Packag., vol. 113, pp. 203-215, 1991
-
D. A. Bittle et al., "Piezoresitive Stress Sensors for Structural Analysis of Electronic Packages,"/ Electron. Packag., vol. 113, pp. 203-215, 1991.
-
-
-
Bittle, D.A.1
-
19
-
-
33747415607
-
-
in MME Tech. Dig., 1997, pp. 203-206
-
M. Mayer, O. Paul, and H. Baltes, "Complete set of piezoresistive coefficients of CMOS N+-diffusion," in MME Tech. Dig., 1997, pp. 203-206.
-
"Complete Set of Piezoresistive Coefficients of CMOS N+-diffusion,"
-
-
Mayer, M.1
Paul, O.2
Baltes, H.3
-
20
-
-
0024766321
-
-
Metallurg. Trans. A, vol. 20A, pp. 2217-2245, 1989
-
W. Nix, "Mechanical properties of thin films," Metallurg. Trans. A, vol. 20A, pp. 2217-2245, 1989.
-
"Mechanical Properties of Thin Films,"
-
-
Nix, W.1
|