Depth profiling for ultrashallow implants using backside secondary ion mass spectrometry

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 4, 2003, Pages 1422-1427

  Hongo, C ^a   Tomita, M ^a   Takenaka, M ^a   Suzuki, M ^a   Murakoshi, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SILICON; SURFACE PROPERTIES;

ULTRASHALLOW IMPLANTS;

ION IMPLANTATION;

EID: 0141458237     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1592808     Document Type: Conference Paper

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