Backside sputter depth profiling of phosphorus diffusion from a polysilicon source

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 1, 2002, Pages 448-450

  Ronsheim, P ^a   Chidambarrao, D ^a   Jagannathan, B ^a   Hunt, D ^a  

^a IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; ETCHING; GRINDING (COMMINUTION); INTERFACES (MATERIALS); PHOSPHORUS; POLYSILICON; SILICON WAFERS; SPECTROSCOPIC ANALYSIS; SPUTTERING; SUBSTRATES;

BACKSIDE SPUTTER DEPTH PROFILING; ION MASS SPECTROSCOPY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036121969     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1424281     Document Type: Conference Paper

References (3)