Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 193-197

  Yeo, K L ^a   Wee, A T S ^a   Liu, R ^a   Zhou, F F ^a   See, A ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; ION IMPLANTATION; NANOTECHNOLOGY; NITRIDING; NITROGEN; PLASMAS; POLYSILICON; POSITIVE IONS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; THERMOOXIDATION;

BACKSIDE DEPTH PROFILING; BACKSIDE SECONDARY ION MASS SPECTROMETRY; BORON PENETRATION; DECOUPLED PLASMA NITRIDED GATE OXIDE; OXYGEN FLOODING; RAPID THERMAL OXIDATION;

SEMICONDUCTING BORON;

EID: 0037207715     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1535925     Document Type: Article

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