Backside-SIMS profiling of dopants in thin Hf silicate film

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 594-597

  Hongo, Chie ^a   Takenaka, Miyuki ^a   Kamimuta, Yuuichi ^a   Suzuki, Masamichi ^a   Koyama, Masato ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

B; Backside SIMS; Dopant penetration; Hf silicate

Indexed keywords

BORON; DIFFUSION; DOPING (ADDITIVES); PERMITTIVITY; POLYSILICON; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SILICATES; SUBSTRATES;

BACKSIDE SECONDARY ION MASS SPECTROMETRY (SIMS); DOPANT PENETRATION; HF SILICATE;

HAFNIUM COMPOUNDS;

EID: 2942616705     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.118     Document Type: Conference Paper

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