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Volumn 231-232, Issue , 2004, Pages 614-617
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Depth profiles of boron and nitrogen in SiON films by backside SIMS
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Author keywords
Gate dielectrics; High depth resolution; Oxynitride
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Indexed keywords
BORON;
DIELECTRIC FILMS;
GATES (TRANSISTOR);
IONS;
MONITORING;
NITROGEN;
POLYSILICON;
SECONDARY ION MASS SPECTROMETRY;
GATE DIELECTRICS;
HIGH DEPTH PERCEPTION;
OXYNITRIDES;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 2942565905
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2004.03.123 Document Type: Conference Paper |
Times cited : (4)
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References (5)
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