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Volumn 231-232, Issue , 2004, Pages 614-617

Depth profiles of boron and nitrogen in SiON films by backside SIMS

Author keywords

Gate dielectrics; High depth resolution; Oxynitride

Indexed keywords

BORON; DIELECTRIC FILMS; GATES (TRANSISTOR); IONS; MONITORING; NITROGEN; POLYSILICON; SECONDARY ION MASS SPECTROMETRY;

EID: 2942565905     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.123     Document Type: Conference Paper
Times cited : (4)

References (5)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.