Iron silicide formation by precipitation in a silicon bicrystal

Physica Status Solidi (A) Applied Research

Volumn 161, Issue 1, 1997, Pages 75-84

  Portier, X ^a,b   Ihlal, A ^a   Rizk, R ^a  

^a CNRS   (France)

^b UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; COOLING; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; ELECTRIC CURRENT MEASUREMENT; ELECTRON BEAMS; ELECTRON MICROSCOPY; EPITAXIAL GROWTH; GRAIN BOUNDARIES; IRON COMPOUNDS; PRECIPITATION (CHEMICAL); X RAY CRYSTALLOGRAPHY;

ENERGY DISPERSIVE X RAY ANALYSIS; IRON SILICIDE;

SEMICONDUCTING SILICON;

EID: 0031140739     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199705)161:1<75::AID-PSSA75>3.0.CO;2-3     Document Type: Article

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