Improved au schottky contacts on GaAs using cryogenic metal deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 4, 2006, Pages 1799-1802

  Wang, Hung Ta ^a   Jang, S ^a   Anderson, T ^a   Chen, J J ^a   Kang, B S ^a   Ren, F ^a   Herrero, A ^a   Gerger, A M ^a   Gila, B P ^a   Pearton, S J ^a   Shen, H ^b   Laroche, Jeffrey R ^c   Smith, Kurt V ^c  

^a University of Florida   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENIC METAL DEPOSITION; SCHOTTKY CONTACT DEPOSITION; SCHOTTKY CONTACTS; X RAY REFLECTIVITY MEASUREMENTS;

CRYOGENICS; DEPOSITION; GETTERS; IMPURITIES; LOW TEMPERATURE EFFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; X RAY ANALYSIS;

GOLD;

EID: 33746593812     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2213270     Document Type: Article

References (17)

1. N. Wichmann, I. Dusznynski, X. Wallart, S. Bollaert, and A. Cappy, IEEE Electron Device Lett. 26, 601 (2005).
2. K. Shinohara, Y. Yamshita, A. Endoh, I. Watanabe, K. Hikosaka, T. Matsui, T. Mimura, and S. Hiyamizu, IEEE Electron Device Lett. 25, 241 (2004).
3. W. Zhao, S. Kim, J. Zhang, and I. Adesida, IEEE Electron Device Lett. 27, 4 (2006).
4. Y. Yamashita, A. Endoh, K. Shinohara, K. Hikosara, T. Matsui, S. Hiyamizu, and T. Mimura, IEEE Electron Device Lett. 23, 573 (2002).
5. S. Bollaert, X. Wallart, S. Lepilleet, and A. Cappy, IEEE Electron Device Lett. 23, 73 (2002).
6. C. Gaquiere, J. Grunenputt, D. Jambon, E. Delos, D. Ducatteau, M. Werquin, D. Theron, and P. Fellon, IEEE Electron Device Lett. 26, 533 (2005).
7. S. Kim, K. H. Lee, J. H. Lee, and K. S. Seo, IEEE Electron Device Lett. 26, 787 (2005).
8. J. Sun et al., IEEE Electron Device Lett. 24, 375 (2003).
9. A. P. Zhang et al., Solid-State Electron. 47, 821 (2003).
10. A. P. Zhang, L. B. Rowland, E. B. Kaminsky, V. Tilak, J. C. Grande, J. Teetsov, A. Vertiatchikh, and L. F. Eastman, J. Electron. Mater. 32, 388 (2003).
11. V. Kumar, L. Zhou, D. Selvanathan, and I. Adesida, J. Appl. Phys. 92, 1712 (2002).
12. A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, and S. Noor Mohammad, J. Appl. Phys. 93, 1087 (2003).
13. H. J. Lee, W. A. Anderson, H. Hardtdegen, and H. Luth, Appl. Phys. Lett. 63, 1939 (1993).
14. S. A. Clark, S. P. Wilks, A. Kestle, D. I. Westwood, and M. Elliot, Surf. Sci. 352-354, 850 (1996).
15. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1990).
16. D. S. Cammack et al., Appl. Surf. Sci. 123/123, 501 (1998).
17. J. E. Siewenie and L. He, J. Vac. Sci. Technol. A 17, 1799 (1999).