0.12 μm transferred-substrate In0.52Al0.48As/In0.53Ga0.47As HEMTs on silicon wafer

IEEE Electron Device Letters

Volumn 23, Issue 2, 2002, Pages 73-75

  Bollaert, S ^b   Wallaert, X ^b   Lepilliet, S ^b   Cappy, A ^a,b   Jalaguier, E ^c   Pocas, S ^c   Aspar, B ^c  

^a IEEE

^b INSTITUT D ELECTRONIQUE   (France)

^c CEA LETI   (France)

Author keywords

High electron mobility transistors (HEMTs); InAlAs InGaAs; InP; Transferred substrate

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FREQUENCIES; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SILICON WAFERS; SUBSTRATES; TRANSCONDUCTANCE;

CURRENT GAIN; CUTOFF FREQUENCY; DELTA DOPING PLANE; DRAIN TO SOURCE CURRENT; GATE LENGTH; SCHOTTKY CONTACT; SHEET RESISTANCE; SHORT CHANNEL EFFECT; SUBSTRATE TEMPERATURE SEQUENCE; TRANSFERRED SUBSTRATE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036477278     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.981310     Document Type: Article

References (6)

1. Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs high electron mobility transistors within the range of 400 GHz cutoff frequency
2. T 50-nm-gate lattice-matched InAlAs/InGaAs HEMT's
3. max
4. Submicron transferred-substrate heterojunction bipolar transistors
5. Detailed characterization of wafer bonding mechanisms
6. Ultra-high speed modulation doped field effect transistor: A tutorial review