Fabrication and characterization of 100-nm In0.53Ga0.47As-In0.52 Al0.48As double-gate HEMTs with two separate gate controls

IEEE Electron Device Letters

Volumn 26, Issue 9, 2005, Pages 601-603

  Wichmann, Nicolas ^a   Duszynski, I ^a   Wallart, X ^a   Bollaert, S ^a   Cappy, A ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

Benzocyclobutene (BCB); Bonding; Double gate (DG); High electron mobility transistor (HEMT); InP; Transferred substrate; Velocity modulation transistor (VMT)

Indexed keywords

ADHESIVES; BONDING; CHARACTERIZATION; GATES (TRANSISTOR); POLYBUTENES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; THRESHOLD VOLTAGE;

BENZOCYCLOBUTENE; DOUBLE GATE TRANSISTORS; TRANSFERRED SUBSTRATE; VELOCITY MODULATION TRANSISTOR;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 26444529869     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.854353     Document Type: Article

References (7)

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5. N. Wichmann, I. Duszynski, S. Bollaert, J. Mateos, X. Wallart, and A. Cappy, "100 nm InAlAs/InGaAs double-gate HEMT using transferred substrate," in IEDM Tech. Dig., Dec. 2004, pp. 1023-1026.
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