![]() |
Volumn 123-124, Issue , 1998, Pages 501-507
|
An investigation of the properties of intimate In-In x Ga 1 - x As(100) interfaces formed at room and cryogenic temperatures
|
Author keywords
Barrier height enhancement; I V; In Ingaas contacts; Room and cryogenic temperatures; SXPS; TEM
|
Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC CONTACTS;
INTERFACES (MATERIALS);
LOW TEMPERATURE EFFECTS;
METALLIZING;
REACTION KINETICS;
SEMICONDUCTOR DIODES;
SEMICONDUCTOR GROWTH;
SURFACE PROPERTIES;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY PHOTOELECTRON SPECTROSCOPY;
SCHOTTKY BARRIERS;
SEMICONDUCTING INDIUM COMPOUNDS;
|
EID: 4243806754
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(97)00529-1 Document Type: Article |
Times cited : (9)
|
References (11)
|