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Volumn 123-124, Issue , 1998, Pages 501-507

An investigation of the properties of intimate In-In x Ga 1 - x As(100) interfaces formed at room and cryogenic temperatures

Author keywords

Barrier height enhancement; I V; In Ingaas contacts; Room and cryogenic temperatures; SXPS; TEM

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; METALLIZING; REACTION KINETICS; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SURFACE PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 4243806754     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00529-1     Document Type: Article
Times cited : (9)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.